Low micropipe 100 mm silicon carbide wafer

Details Low micropipe 100 mm silicon carbide wafer Low micropipe 100 mm silicon carbide wafer

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C30B 23/00 (2006.01) C30B 33/10 (2006.01)

Patent

CA 2581856

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100mm and a micropipe density of less than about 25 cm-2.

L'invention concerne une plaquette monocristalline de haute qualité en SiC ayant un diamètre d'au moins environ 100 mm et une densité de microtubes inférieure à environ 25 cm-2.

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