Low noise multistage avalanche photodetector

Details Low noise multistage avalanche photodetector Low noise multistage avalanche photodetector

H - Electricity

01

L

345/24

H01L 31/02 (2006.01) H01L 29/205 (2006.01) H01L 31/107 (2006.01) H01L 31/111 (2006.01)

Patent

CA 1135823

GORDON-2 - 19 - LOW NOISE MULTISTAGE AVALANCHE PHOTODETECTOR Abstract of the Disclosure Devices constructed according to the present invention provide low noise avalanche photodetectors. The devices are comprised of a sequence of at least four layers of semiconductor material of alternating opposed conductivity. In a first embodiments the layers form alternating homojunctions and heterojunctions at the interface between adjacent layers, and the bandgap of the layers on either side of the homojunctions decreases in the direction of the propagating signal. In another embodiment, the layers form heterojunctions at the interfaces between adjacent layers; the layers are grouped into a sequence of pairs of layers where the bandgap of the two layers in each pair are substantially equal; and the bandgap of the layers in the sequence of pairs of layers decreases in the direction of the propagating signal. The effect of the structure of the multilayer device is to create traps for one sign of carrier and to prevent the trapped carrier from avalanching through amplification regions of the device.

335545

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