Low pressure chemical vapor deposition of silicon dioxide...

Details Low pressure chemical vapor deposition of silicon dioxide... Low pressure chemical vapor deposition of silicon dioxide...

H - Electricity

01

L

148/2.1

H01L 21/365 (2006.01) C23C 16/40 (2006.01)

Patent

CA 1166128

LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON DIOXIDE WITH OXYGEN ENHANCEMENT OF THE CHLOROSILANE-NITROUS OXIDE REACTION Abstract A method is described for forming a silicon dioxide layer on a semiconductor substrate in a furnace heated re- action zone of a chemical vapor deposition reactor having an input end for gaseous reactants wherein the silicon dioxide layer is not subject to degradation during sub- sequent oxidation cycles. A gaseous chlorosilane is mixed with nitrous oxide gas in the reactor. Oxygen gas is added, between about 0.25% to 10% by volume of total reactive gas mixture, to the chlorosilane and nitrous oxide gases in the reaction zone where the temperature is between about 800°C to 1200°C in a pressure of less than about 5 torr to deposit the silicon dioxide layer onto the substrate. FI9-79-018

354063

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