Low resistance contact semiconductor diode

Details Low resistance contact semiconductor diode Low resistance contact semiconductor diode

H - Electricity

01

L

H01L 29/205 (2006.01) H01L 31/0216 (2006.01) H01L 31/0224 (2006.01) H01S 5/183 (2006.01) H01S 5/20 (2006.01) H01S 5/223 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2238952

A semiconductor device wherein the layer of highly doped p-type material (2) typically found in devices of the prior art is replaced with a layer of highly doped n-type material (11) and a thin layer of highly doped p-type material (2) thus facilitating low resistance contact, transparency to radiation produced by the device and confinement with low loss of radiation produced by laser devices.

Dispositif à semi-conducteurs dans lequel la couche de matériau de type p fortement dopé (2) qu'on trouve généralement dans les dispositifs existants jusqu'à présent est remplacée par une couche de matériau de type n fortement dopé (11) et une fine couche de matériau de type p fortement dopé (2), ce qui facilite le contact à faible résistance, la transparence au rayonnement produit par le dispositif et le confinement avec une faible perte du rayonnement produit par les dispositifs laser.

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