H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/133, 352/82
H01L 23/532 (2006.01) H01L 21/768 (2006.01)
Patent
CA 1161958
ABSTRACT OF THE DISCLOSURE A low resistance double bit line structure has doped polycrystal- line strips of one conductivity contacting a monocrystalline body of the op- posite conductivity through strip-shaped apertures in an insulating layer. The polycrystalline material also extends from the bit lines over thin areas of the insulating layer and form memory capacitors and associated transfer electrodes.
348649
Horninger Karlheinrich
Schwabe Ulrich
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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