Low resistance line

H - Electricity – 01 – L

Patent

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356/133, 352/82

H01L 23/532 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1161958

ABSTRACT OF THE DISCLOSURE A low resistance double bit line structure has doped polycrystal- line strips of one conductivity contacting a monocrystalline body of the op- posite conductivity through strip-shaped apertures in an insulating layer. The polycrystalline material also extends from the bit lines over thin areas of the insulating layer and form memory capacitors and associated transfer electrodes.

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