Low resistance schottky diode on polysilicon/metal- silicide

Details Low resistance schottky diode on polysilicon/metal- silicide Low resistance schottky diode on polysilicon/metal- silicide

H - Electricity

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H01L 21/28 (2006.01) H01L 21/329 (2006.01) H01L 21/70 (2006.01) H01L 21/84 (2006.01) H01L 29/04 (2006.01) H01L 29/872 (2006.01)

Patent

CA 1188009

ABSTRACT A Schottky diode is fabricated according to the following steps: forming a layer of metal-silicide on an underlying dielectric layer, forming a polysilicon layer on the upper surface of the metal-silicide layer, forming a second dielectric layer on the upper surface of the polysilicon layer and patterning the second dielectric layer to create a contact window through the second dielectric layer to an exposed surface region of the polysilicon layer, and forming a metal contact to the exposed surface region.

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