H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/48 (2006.01) B81B 7/00 (2006.01) H01L 21/768 (2006.01) H01L 23/52 (2006.01) H05K 3/40 (2006.01) H05K 3/42 (2006.01)
Patent
CA 2692595
The present invention provides a wafer (3) comprising a through-wafer via (7) through the wafer (3) formed by a through-wafer via hole (9) and at least a first conductive coating (25). A substantially vertical sidewall (11) of the through-wafer via hole (9) except for a constriction (23) provides a reliable through-wafer via (7) occupying a small area on the wafer. The wafer (3) is preferably made of a semiconductor material, such as silicon, or a glass ceramic. A method for manufacturing such a wafer (3) is described.
La présente invention a trait à une tranche (3) comprenant un trou d'interconnexion traversant la tranche (7) passant à travers la tranche, (3) constituée d'un orifice d'interconnexion traversant la tranche (9) et au moins d'un premier revêtement conducteur (25). Une paroi latérale sensiblement verticale (11) de l'orifice d'interconnexion traversant la tranche (9) à l'exception d'un rétrécissement (23) fournit un trou d'interconnexion fiable traversant la tranche (7) occupant une petite zone sur la tranche. La tranche (3) est de préférence constituée d'un matériau semi-conducteur, tel que le silicium, ou d'une vitrocéramique. La présente invention a trait à un procédé de fabrication de ladite tranche (3).
Aac Microtec Ab
Ridout & Maybee Llp
LandOfFree
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