Low resistivity hillock free conductors in vlsi devices

Details Low resistivity hillock free conductors in vlsi devices Low resistivity hillock free conductors in vlsi devices

H - Electricity

01

L

356/133

H01L 21/70 (2006.01) H01L 21/3205 (2006.01) H01L 27/02 (2006.01)

Patent

CA 1238429

LOW RESISTIVITY HILLOCK FREE CONDUCTORS IN VLSI DEVICES Abstract of the Disclosure Particularly for use in MOS (metal-oxide-semiconductor) VLSI (very large scale integrated) circuits, an aluminum conductor coated with a layer of refractory metal or refractory metal silicide has the advantages of being resistant both to electromigration and to hillock growth. By this invention, to reduce the resistivity of this composite conductor and to eliminate hillock formation, the conductor is subjected to an ion implantation step to cause interface mixing between the aluminum and the adjacent refractory metal or refractory metal silicide. - i -

504195

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