Low stress polysilicon microstructures

H - Electricity – 01 – L

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356/23

H01L 21/31 (2006.01) G01F 1/684 (2006.01) G01L 9/00 (2006.01) H01L 21/3205 (2006.01)

Patent

CA 1312964

ABSTRACT OF THE DISCLOSURE Method for relieving stress in silicon microstructures by forming a silicide on the microstructures. Sensors comprising a stress-relieved silicon microstructure are also described.

608726

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