Low temperature binary glass for use as a multilevel...

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31/193, 148/3.5

H01L 21/56 (2006.01) C03C 3/076 (2006.01) C03C 3/097 (2006.01) C03C 4/16 (2006.01) C23C 16/40 (2006.01)

Patent

CA 1201582

A LOW TEMPERATURE BINARY GLASS FOR USE AS A MULTILEVEL DIELECTRIC LAYER William I. Lehrer ABSTRACT A binary glass for use in integrated circuits has a softening or flow point far below temperatures at which glasses normally used-in connection with integrated circuits flow. Preferably the glass comprises a mixture of germanium dioxide and silicon dioxide wherein the germanium dioxide is no greater than approximately 50% by weight of the mixture. Phosphorus is added to the glass film for passivation of the underlying devices.

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