Low temperature formation of backside ohmic contacts for...

Details Low temperature formation of backside ohmic contacts for... Low temperature formation of backside ohmic contacts for...

H - Electricity

01

L

H01L 21/04 (2006.01) H01L 31/0224 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2465228

A method for forming an ohmic contact to silicon carbide for a semiconductor device comprises implanting impurity atoms into a surface of a silicon carbide substrate thereby forming a layer on the silicon carbide substrate having an increased concentration of impurity atoms, annealing the implanted silicon carbide substrate, and depositing a layer of metal on the implanted surface of the silicon carbide. The metal forms an ohmic contact "as deposited" on the silicon carbide substrate without the need for a post-deposition anneal step.

L'invention porte sur un procédé de formation d'un contact ohmique avec du carbure de silicium pour un dispositif semi-conducteur consistant: à implanter des atomes d'impuretés à la surface d'un substrat de carbure de silicium de manière à former sur ledit substrat une couche à concentration accrue d'atomes d'impuretés; à recuire ledit substrat ainsi implanté; et à déposer une couche de métal sur la surface implantée du carbure de silicium. Le métal forme un contact ohmique "comme déposé" sur le substrat en évitant l'étape du recuit après dépôt..

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