C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/02 (2006.01) C23C 14/22 (2006.01) C30B 23/02 (2006.01) H01L 21/203 (2006.01)
Patent
CA 2147198
A low temperature ion-beam assisted deposition process, comprising the steps of cleaning at least one substrate, subjecting the substrate to a vacuum of at least 2x10-4 Torr, heating the substrate to a temperature of at least 280°C, and directing an ion beam at the substrate, wherein the ion beam comprises ion-associated gas molecules of Si or Ge, so as to grow a thin epitaxial film of Si or Ge on the substrate.
Brodie Donald E.
Mohajerzadeh Shamsoddin
Selvakumar Chettypalayam R.
Sim & Mcburney
University Of Waterloo (the)
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