H - Electricity – 01 – L
Patent
H - Electricity
01
L
204/96.31, 148/3
H01L 21/318 (2006.01) H01L 29/62 (1990.01)
Patent
CA 1292966
ABSTRACT OF THE DISCLOSURE A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is intrpduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultane- ously. The thin nitride films that are formed by the process have application both as barriers for device isolation and as dielectric components of electrical devices.
506044
Anand Kranti V.
Barry Michael L.
Cairns Bruce R.
Keyser Thomas
Petro William G.
Fairchild Semiconductor Corporation
Smart & Biggar
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