C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/91.8
C23C 16/40 (2006.01) C01B 13/20 (2006.01) C23C 16/48 (2006.01) H01L 21/225 (2006.01) H01L 21/316 (2006.01) H01L 21/473 (2006.01)
Patent
CA 1183102
ABSTRACT OF THE DISCLOSURE The specification discloses a low temperature pro- cess for depositing oxide layers on a substrate by photo- chemical vapor deposition, by exposing the substrate to a selected vapor phase reactant in the presence of photo- chemically generated neutral (unionized) oxygen atoms. The oxygen atoms react with the vapor phase reactant to form the desired oxide, which deposits as a layer on the substrate. The use of photochemically generated neutral oxygen atoms avoids damage to the substrate due to charge bombardment or radiation bombardment of the sub- strate. The deposited oxide layer may optionally incorporate a selected dopant material in order to modify the physical, electrical, or optical character- istics of the oxide layer.
377778
Gowling Lafleur Henderson Llp
Hughes Aircraft Company
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