Low temperature tunneling transistor

Details Low temperature tunneling transistor Low temperature tunneling transistor

H - Electricity

01

L

356/112, 356/119

H01L 39/22 (2006.01) H01L 29/15 (2006.01)

Patent

CA 1216961

ABSTRACT LOW TEMPERATURE TUNNELING TRANSISTOR The low temperature tunneling transistor comprises a source electrode and a drain electrode, with a semiconductor tunnel channel arranged therebetween. A gate for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage which modifies the barrier height between source and drain thereby changing the tunnel probability.

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