Low voltage electrically erasable programmable read only memory

Details Low voltage electrically erasable programmable read only memory Low voltage electrically erasable programmable read only memory

G - Physics

11

C

328/202, 352/81

G11C 11/40 (2006.01) G11C 16/04 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1149064

LOW VOLTAGE ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY Abstract An improved memory system is provided for charging and discharging a conductive plate such as a floating gate of a field effect transistor with a charge injector controlled by a low single polarity voltage pulse. In the system of the invention, the conductive plate may be a floating gate of a field effect transistor which also includes first and second or dual control gates. A single or double graded band gap layer, such as a silicon rich layer of silicon dioxide is disposed only between the floating gate and the first control gate forming a capacitor having a given capacitance with a larger capacitor disposed between the second control gate and the floating gate. These cells or transistors may be used in an array for storing for long periods of time, on the order of 10 years or more, binary digits of information representing a 0 or a 1 depending upon whether a charge is stored on the floating ate. When using these cells in a memory array, information may be written into or erased from each of the cells individually or a blanket erase may be employed for the entire or a selected section of the array. To write and to erase a cell, a low single polarity voltage is employed. Several embodiments of the invention are disclosed including one embodiment wherein the dual gates are located on one side of the floating gate, a second embodiment which uses a diffusion in a semiconductor substrate as one of the control gates and a third embodiment wherein one of the control gates is disposed on one side of, or above, the floating gate and the other control gate is disposed on the other side of, or below, the floating gate near the surface of the channel region of the transistor. BU9-80-010

372695

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