C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.55
C30B 19/10 (2006.01) C30B 19/04 (2006.01) C30B 19/12 (2006.01) H01L 21/208 (2006.01)
Patent
CA 1234036
- 1 - LPE GROWTH ON GROUP III-V COMPOUND SEMICONDUCTOR SUBSTATES CONTAINING PHOSPHORUS Abstract Liquid phase epitaxy (LPE) growth of a Group III-V semiconductor compound layer upon a Group III-V semiconductor compound substrate containing phosphorus is accomplished in a graphite meltholder by heating the substrate in an atmosphere of nitrogen or helium and contacting the substrate with a liquid melt, capable of growing the layer, in an atmosphere of hydrogen.
464149
Keramidas Vassilis G.
Lourenco Jose A.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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