Luminescence stabilization of anodically oxidized porous...

Details Luminescence stabilization of anodically oxidized porous... Luminescence stabilization of anodically oxidized porous...

H - Electricity

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H01L 21/477 (2006.01) C25D 11/32 (2006.01) H01L 21/47 (2006.01)

Patent

CA 2413704

A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

Une structure poreuse en silicium est stabilisée par oxydation anodique de la structure, puis en soumettant celle-ci à une fonctionnalisation chimique pour protéger les régions de la surface non oxydées, de préférence en présence de déc-1-ène dans des conditions thermiques. Ce procédé crée une monocouche organique protectrice à la surface de la structure, la rendant hautement stable.

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