Magnetic bubble devices with controlled temperature...

Details Magnetic bubble devices with controlled temperature... Magnetic bubble devices with controlled temperature...

G - Physics

11

C

352/37.2

G11C 11/14 (2006.01) G11B 5/00 (2006.01) H01F 10/24 (2006.01)

Patent

CA 1068819

MAGNETIC BUBBLE DEVICES WITH CONTROLLED TEMPERATURE CHARACTERISTICS Abstract of the Disclosure The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by control of octahedral site substitution during layer growth. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely matches the temperature dependence of available bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). A preferred substitution species is lutetium, known as a dodecahedral site occupant, for which it has been determined that a significant and controllable octahedral occupancy can be produced by suitable choice of growth conditions.

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