Magnetic domain memory device comprising an improved detector

G - Physics – 11 – C

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352/37.3

G11C 11/14 (2006.01) G11C 19/08 (2006.01)

Patent

CA 1110764

ABSTRACT: The invention relates to a magnetic domain memory. The domains are driven along a structure of discrete elements by a rotary magnetic field. The structure comprises at least two domain detection elements which are formed by inter- connected chevrons. The detection signal is based on the magnetoresistive effect of the series of chevrons. The domain detection elements are pair-wise connected to relevant inputs of one or more pick-up elements which act as a difference determining unit. The detection elements of a pair are arranged to be rotated 180° relative to each other in the plane of the plate, and are otherwise identical. The detection elements are generally asymmetrical in that a majority of pairs of successive chevron elements are interconnected in positions situated between their centre and each time a similar end.Thus, upon passage of a domain within a period of the rotary magnetic field, each time a comparatively large and a comparatively small domain signal can be generated. A domain can then be applied to the detection element in each period of the rotary magnetic field, without mutual interference of the detection signals of directly successive domains. This is also possible for the other detection element of the pair while the detection signals are applied to a difference determining unit. Thus, detection with interference compensation is achieved. The information density is high, while the bit frequency may amount to 2 bits per rotary field period per pick-up element used.

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