Magnetic materials

H - Electricity – 01 – F

Patent

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Details

H01F 1/00 (2006.01) G06N 99/00 (2010.01) G01R 33/00 (2006.01) G01R 33/02 (2006.01) G11B 5/64 (2006.01) G11C 11/16 (2006.01) H03K 19/168 (2006.01) G11B 5/74 (2006.01) G11B 5/82 (2006.01)

Patent

CA 2366588

A memory element comprising nanomagnets having a rotational symmetry selected in order to provide high remanence and a suitable coercivity. There is also a sensor element comprising nanomagnets having a rotational symmetry selected such that they are superparamagnetic and exhibit substantially zero hysteresis so that a magnetisation of the nanomagnets depends only on the current value of applied field and not on the field history.

La présente invention concerne un élément de mémoire comprenant des nano-aimants comportant une symétrie de rotation choisie en vue de fournir une rémanence élevée et une force coercitive appropriée. Il est aussi prévu un élément capteur comprenant des nano-aimants présentant une symétrie de rotation choisie pour qu'ils soient superparamagnétiques et présentent sensiblement une hystérésis nulle de sorte qu'une magnétisation des nano-aimants ne dépende que de la valeur courante du champs appliqué et non de l'historique du champ.

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