G - Physics
11
C
352/37
G11C 11/14 (2006.01) G11C 11/15 (2006.01)
Patent
CA 1284382
ABSTRACT A digital memory based on a memory cell having two magnetoresistive, ferromagnetic film portions separated by an intermediate layer, all of limited thickness.
538580
Daughton James M.
Pohm Arthur V.
Micron Technology Inc.
Smart & Biggar
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