Magnetic memory composition and method of manufacture

G - Physics – 11 – C

Patent

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G11C 11/14 (2006.01) G11C 7/10 (2006.01) G11C 11/02 (2006.01) G11C 11/18 (2006.01)

Patent

CA 2633478

A sensing device includes a sensor, a control unit, an input/output (I/O) interface, and a non-volatile magnetic mem-ory device having one or more memory cells, each of the memory cells, wherein each memory cell of the non- volatile magnetic memory device includes a magnetic switch including a magnetic component and a write coil located proximate the magnetic com-ponent, the write coil coupled to receive a current sufficient to create a remnant magnetic polarity in the magnetic component, and a Hall sensor, positioned proximate the magnetic component, to detect the remnant magnetic polarity indicative of a stored data bit.

Le dispositif de capteur selon l'invention comprend un capteur, une unité de commande, une interface d'entrée/sortie (I/O) et un dispositif de mémoire magnétique non volatile comportant une ou plusieurs cellules mémoires, chacune des cellules mémoires du dispositif de mémoire magnétique non volatile comprenant un commutateur magnétique comprenant un composant magnétique et une bobine d'écriture située à proximité du composant magnétique, la bobine d'écriture étant couplée pour recevoir un courant suffisant pour créer une polarité magnétique rémanente dans le composant magnétique, et un capteur à effet Hall, positionné à proximité du composant magnétique, pour détecter la polarité magnétique rémanente indicatrice d'un bit de données enregistré.

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