G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/02 (2006.01) G11C 17/02 (2006.01)
Patent
CA 2596128
A non-volatile magnetic memory device having one or more memory cells, each of the memory cells includes a magnetic switch including a magnetic component and a write coil located proximate the magnetic component, the write coil coupled to receive a current sufficient to create a remnant magnetic polarity in the magnetic component, and a Hall sensor, positioned proximate the magnetic component, to detect the remnant magnetic polarity indicative of a stored data bit.
L'invention concerne un dispositif mémoire magnétique non volatil comprenant une ou plusieurs cellules mémoires présentant individuellement un commutateur magnétique comprenant un composant magnétique et une bobine d'écriture située à proximité du composant magnétique, celle-ci étant couplée de manière à recevoir un courant suffisant pour créer une polarité magnétique restante dans le composant magnétique et un capteur Hall, positionné à proximité du composant magnétique, de manière à détecter la polarité magnétique restante indiquant un bit d'informations stocké.
Aouba Stephane
Ruda Harry E.
Gowling Lafleur Henderson Llp
University Of Toronto
LandOfFree
Magnetic memory composition and method of manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory composition and method of manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory composition and method of manufacture will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-2053946