Magnetic memory with a magnetic tunnel junction written in a...

Details Magnetic memory with a magnetic tunnel junction written in a... Magnetic memory with a magnetic tunnel junction written in a...

G - Physics

11

C

G11C 11/16 (2006.01)

Patent

CA 2553577

The invention relates to a magnetic memory written in a thermally assisted manner, each memory point (40) consisting of a magnetic tunnel junction, and the cross-section of the memory parallel to the plane of the layers forming the tunnel junction being circular or essentially circular. Said tunnel junction comprises at least one trapped layer (44) with a fixed magnetisation direction, a free layer (42) with a variable magnetisation direction, and an insulating layer (43) arranged between the free layer (42) and the trapped layer (44). According to the invention, the free layer (42) is formed from at least one soft magnetic layer and a trapped layer (41), said two layers being magnetically coupled by contact, and the operating temperature of the reading memory or resting memory is selected in such a way that it is lower than the blocking temperature of the respectively free and trapped layers.

Cette mémoire magnétique à écriture assistée thermiquement, dont chaque point mémoire (40) est constitué d'une jonction tunnel magnétique, et dont la section parallèlement au plan des couches constitutives de la jonction tunnel est circulaire ou sensiblement circulaire, ladite jonction tunnel comprend au moins : - une couche piégée (44), dont l'aimantation est de direction fixe, - une couche libre (42), dont la direction d'aimantation est variable, - une couche isolante (43), interposée entre la couche libre (42) et la couche piégée (44), dans laquelle la couche libre (42) est formée d~au moins une couche magnétique douce et d~une couche de piégeage (41), les deux couches étant couplées magnétiquement par contact, et dans laquelle la température de fonctionnement de la mémoire en lecture ou au repos est choisie en dessous de la température de blocage des couches respectivement libre et piégée.

Affiliated with

Also associated with

Rating

Magnetic memory with a magnetic tunnel junction written in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory with a magnetic tunnel junction written in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory with a magnetic tunnel junction written in a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2017921