G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/16 (2006.01) G11C 11/56 (2006.01) H01L 27/22 (2006.01) H01L 43/08 (2006.01)
Patent
CA 2713337
In a particular embodiment, a magnetic tunnel junction (MTJ) structure (100) is disclosed that includes an MTJ cell having multiple sidewalls (110, 112, 114) that extend substantially normal to a surface of a substrate (490). Each of the multiple sidewalls includes a free layer (106) to carry a unique magnetic domain. Each of the unique magnetic domains is adapted to store a digital value.
Dans un mode de réalisation particulier, l'invention porte sur une structure à jonction à effet tunnel magnétique (MTJ) (100) qui comprend une cellule à MTJ ayant de multiples parois latérales (110, 112, 114) qui s'étendent de façon sensiblement normale à une surface d'un substrat (490). Chacune des multiples parois latérales comprend une couche libre (106) pour porter un domaine magnétique unique. Chacun des domaines magnétiques uniques est conçu pour stocker une valeur numérique.
Qualcomm Incorporated
Smart & Biggar
LandOfFree
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