G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/16 (2006.01)
Patent
CA 2710334
n an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path (102) coupled to the MTJ structure and a write path (104) coupled to the MTJ structure. The write path (104) is separate from the read path (102). The device in substance comprises a pair of serially coupled MTJ structures (106, 108), whereby the read path (102) comprises only one of the MTJ structure (108). This provides for combined improved read margin and improved write margin.
La présente invention concerne un mode de réalisation d'un dispositif qui comprend une structure de jonction tunnel magnétique (MTJ). Le dispositif comprend également un chemin de lecture (102) couplé à la structure MTJ et un chemin d'écriture (104) couplé à la structure MTJ. Le chemin d'écriture (104) est séparé du chemin de lecture (102). En substance, le dispositif comprend une paire de structures MTJ (106, 108) couplées en série, le chemin de lecture (102) ne comportant qu'une structure MTJ (108). Cela améliore à la fois la marge de lecture et la marge d'écriture.
Gu Shiqun
Kang Seung H.
Li Xia
Zhu Xiaochun
Qualcomm Incorporated
Smart & Biggar
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