Magneto-optic memory element

Details Magneto-optic memory element Magneto-optic memory element

G - Physics

11

B

352/31, 352/48,

G11B 11/10 (2006.01) G11B 7/24 (2006.01) G11B 11/105 (2006.01) G11C 13/06 (2006.01)

Patent

CA 1234916

ABSTRACT OF THE DISCLOSURE A magneto-optic memory element includes a GdTbFe recording layer sandwiched between a pair of transparent AlN dielectric layers. At least one of the pair of trans- parent AlN dielectric layers is extended to have a size larger than the GdTbFe recording layer, whereby to cover the peripheral edge of the GdTbFe recording layer, thereby protecting the GdTbFe recording layer from adverse effects of oxygen and moisture. An Al-Ni alloy reflection film is formed on one of the pair of transparent AIN dielectric layers in order to increase the apparent Kerr rotation angle produced by the magneto-optic memory element.

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