Magneto-semiconductor ignition system

Details Magneto-semiconductor ignition system Magneto-semiconductor ignition system

F - Mech Eng,Light,Heat,Weapons

02

P

317/5.3

F02P 1/08 (2006.01) F02P 9/00 (2006.01)

Patent

CA 1151233

ABSTRACT OF THE DISCLOSURE. To suppress negative half-waves derived from a magneto armature and not used for ignition without use of external damping networks, the semiconductor switch controlling current flow, and abrupt turn-off to initiate an ignition event, is formed as a monolithic semiconductor element, and the inherent inverse diode of the monolithic element is utilized to pass the reverse voltage half-waves. To prevent damage to the inherent diodes due to over-voltage or current overloading, a damping resistance element is connected in series with the main current carrying path of the monolithic circuit elements, preferably a Darlington transistor, which, preferably, is a semiconductor resistor having a preferred current passage characteristic in the same direction as the current flow through the Darlington transistor, for example a Zener diode, a resistor, or a series of diodes polarized like the inverse diode, bridged by a diode conducting in the same direction as the Darlington transistor, or the like.

352485

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