G - Physics – 11 – B
Patent
G - Physics
11
B
352/29.4
G11B 5/39 (2006.01)
Patent
CA 1306803
ABSTRACT OF THE DISCLOSURE IMPROVED MAGNETORESISTIVE READ TRANSDUCER ASSEMBLY A magnetoresistive (MR) sensor which is provided with longitudinal bias by means of exchange coupling between the ferromagnetic MR layer (NiFe) and an ultrathin layer of an antiferromagnetic material (FeMn) with a thickness within the range of about 25 to 200 angstroms. The exchange structure is capped by a protective film to prevent oxidation damage to the exchange structure during subsequent thermal cycling. The capping layer is a dielectric or metal oxide (cermet) film such as Cr2 O3, A12 O3, Cr - Si O or Si O2. Alternatively, the capping layer can be a laminated FeMn-Lx film where LX is taken from the group consisting of Cr2 O3, A12 O3, and Si O2. SA987006
572877
International Business Machines Corporation
Kerr Alexander
LandOfFree
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