G - Physics – 01 – R
Patent
G - Physics
01
R
G01R 33/02 (2006.01) G01R 33/09 (2006.01) G11B 5/39 (2006.01) H01F 10/32 (2006.01) H01L 43/10 (2006.01)
Patent
CA 2060561
A magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material and a non-magnetic metallic material. The ferromagnetic material and the non-magnetic material form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed.
Capteur magnétorésistant (MR) comprenant une structure multicouches formée sur un substrat. Il comporte des couches alternées de matériau ferromagnétique et un matériau métallique non métallique. Les matériaux ferromagnétique et non magnétique constituent deux couches qui ont comme propriété que la magnétorésistance de la structure multicouches oscille en fonction de l'épaisseur du matériau non magnétique. Une intensité de courant est produite dans le capteur MR, et les variations de la résistivité du capteur MR sont détectées en tant que fonction du champ magnétique à étudier.
Parkin Stuart Stephen Papworth
Roche Kevin Patrick
International Business Machines Corporation
Saunders Raymond H.
LandOfFree
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