Magnetoresistor with accumulation layer

Details Magnetoresistor with accumulation layer Magnetoresistor with accumulation layer

H - Electricity

01

L

356/94

H01L 43/00 (2006.01) G01R 33/09 (2006.01) H01L 43/08 (2006.01)

Patent

CA 1303246

C-4076 MAGNETORESISTOR WITH ACCUMULATION LAYER Abstract of the Disclosure A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, preferably having a band gap of at least about 0.35 electron volts. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.

604133

Affiliated with

Also associated with

Rating

Magnetoresistor with accumulation layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistor with accumulation layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistor with accumulation layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1262579