Magnetron cathode sputtering system

Details Magnetron cathode sputtering system Magnetron cathode sputtering system

C - Chemistry, Metallurgy

23

C

204/167.2

C23C 14/34 (2006.01) H01J 37/34 (2006.01)

Patent

CA 1193998

ABSTRACT: A magnetron cathode sputtering system which com- prises in an envelope a flat cathode from the material to be sputtered and a substantially circular anode situated coaxially with respect to the cathode. Behind the cathode, magnetic means are provided to generate at least one closed tunnel of field lines over a part of the cathode surface (a so-called electron trap). Between the anode and the edge of the cathode is present according to the invention a coaxial, substantially cylindrical auxiliary electrode. From the centre of the cathode a rod-shaped auxiliary elec- trode moreover extends axially. The auxiliary electrodes modify the electric field in such a manner that the elec- trons which are not captured in the tunnel of magnetic field lines are directed substantially towards the anode. The distance from the rod-shaped electrode the the sub- strate must be chosen to be comparitively small. By using the invention the substrate is less heated and not so much damaged by electron bombardment.

428547

Affiliated with

Also associated with

Rating

Magnetron cathode sputtering system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetron cathode sputtering system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron cathode sputtering system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1266665