Magnetron sputtering apparatus and process

Details Magnetron sputtering apparatus and process Magnetron sputtering apparatus and process

C - Chemistry, Metallurgy

23

C

204/96.08

C23C 14/35 (2006.01) C23C 8/02 (2006.01) C23C 14/00 (2006.01) C23C 14/08 (2006.01) C23C 14/10 (2006.01) C23C 14/34 (2006.01) C23C 14/50 (2006.01) C23C 14/56 (2006.01) C23C 14/58 (2006.01)

Patent

CA 1340651

A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and intense plasma reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by scaling and high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.

590272

Affiliated with

Also associated with

Rating

Magnetron sputtering apparatus and process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetron sputtering apparatus and process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron sputtering apparatus and process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1340354