Magnetron sputtering apparatus and thin film depositing method

Details Magnetron sputtering apparatus and thin film depositing method Magnetron sputtering apparatus and thin film depositing method

H - Electricity

01

L

356/187

H01L 21/363 (2006.01) H01J 37/34 (2006.01)

Patent

CA 2037260

ABSTRACT OF THE DISCLOSURE A magnetron cathode sputtering apparatus Provides an increased strength of the magnetic field around the center area of a target when the sputtering occurs on the target, thereby reducing any dust particles that might settle on the center target area and might be flying toward a water or each individul substrate thereon, resulting in forming or depositing a thin film containing defects such as pin holes on the water. A magnetron cathod sputtering method uses such apparatus to form or deposit a thin film layer on the wafer, with its distribution limited to within + 5%, and provides an improved step coverage for the contact holes formed in each individual substrate on the wafer. from which any irregularities can be eliminated.

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