Manufacture of an infra-red detector element, and detector...

H - Electricity – 01 – L

Patent

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Details

CPC

345/14

IPC codes

H01L 31/18 (2006.01) H01L 21/465 (2006.01) H01L 21/467 (2006.01) H01L 27/144 (2006.01) H01L 31/0224 (2006.01) H01L 31/0296 (2006.01) H01L 31/0352 (2006.01) H01L 31/036 (2006.01) H01L 31/09 (2006.01)

Type

Patent

Patent number

CA 1143460

Description

1 PHB 32632 ABSTRACT: In the manufacture of an infra-red radiation detector element a body of infra-red sensitive material (e.g. cadmium mercury telluride) secured to a substrate is subjected to ion-etching to remove part of the material over the whole thickness of the element at areas between the contact areas of the element electrodes so as to define a current path between these electrodes which extends through the remaining material and is longer than the distance along a straight line between the electrodes. This longer current path increases the charge-carrier transit time and resistance between the electrodes so that the responsivity of the detector element can be improved while still producing a compact element structure because of the advantages of defining the current path by ion-etching. This etch-removal may involve forming parallel slots which extend from opposite side walls of the element to define a meandering current path, and may additionally be used to form a mutual separation between portions of the body each of which is to form a separate infra-red detector element of an array formed on the substrate.

Application Number

332580

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