C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.1
C30B 29/46 (2006.01) C30B 25/02 (2006.01)
Patent
CA 1192475
ABSTRACT A layer of CdxHg1-xTe is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suit- able pressure and a temperature below the alkyl decomposition temperature. Hydrogen is passed through bubblers separately containing alkyls of cadmium, telluride and, if required, a dopant into the vessel. The substrate is indepen- dently heated above the temperature of the vessel so that the alkyls decompose on the substrate. The substrate may be CdTe, a II-VI compound or mixed II-VI alloy. The alkyls may be dimethyl cadmium, diethyl cadmium, dipropyl cadmium, dimethyl telluride, diethyl telluride, dipropyl telluride, dibutyl telluride etc, or hydrogen substituted tellurium alkyls such as hydrogen ethyl telluride etc.
378354
Irvine Stuart J.c.
Mullin John B.
Fetherstonhaugh & Co.
The Secretary Of State For Defence In Her Britannic Majesty's Go
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