Manufacture of cadmium mercury telluride

Details Manufacture of cadmium mercury telluride Manufacture of cadmium mercury telluride

C - Chemistry, Metallurgy

30

B

117/83, 148/2.1

C30B 25/16 (2006.01) C23C 16/30 (2006.01) C30B 25/22 (2006.01) H01L 21/365 (2006.01) H01L 29/22 (2006.01) H01L 31/0296 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1229290

ABSTRACT A layer (37) of Cd Hg1-xTe is grown on a substrate (20) by growing layers of HgTe (35)x t1 thick and CdTe (36) t2 thick alternately. The thicknesses t1 and t2 combined are less than 0.5 µm so that interdiffusion occurs during growth to give a single layer (37) of Cd Hg1-xTe. The HgTe layers (35) are grown by flowing a Te alkyl (7) into a vessel (16) containing the substrate (20) and filled with an Hg atmosphere by a Hg bath (19). The CdTe layers (36) are grown by flowing a Cd alkyl (6) into the vessel (16) where it combines preferentially with the Te on the substrate (20). Varying the ratio of t to t varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced (25) to dope the growing layer.

462750

Affiliated with

Also associated with

Rating

Manufacture of cadmium mercury telluride does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacture of cadmium mercury telluride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture of cadmium mercury telluride will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1265697