Manufacture of complementary vertical transistors

Details Manufacture of complementary vertical transistors Manufacture of complementary vertical transistors

H - Electricity

01

L

356/125

H01L 29/70 (2006.01) H01L 21/22 (2006.01) H01L 21/8228 (2006.01) H01L 27/082 (2006.01)

Patent

CA 1038968

INTEGRATED COMPLEMENTARY VERTICAL TRANSISTORS AND METHOD Abstract of the Disclosure The invention resides in a monolithic integrated circuit containing complementary bipolar transistors of the vertical configuration and having closely-matched transistor parameters. This structure is achieved by a particular combination of impurity introducing techniques and by matching the particular diffusants used to produce complementary transistors having substantially matching impurity distribution profiles. In particular, a first formed N-type isolation zone for the PNP transistor, in combination with the third-formed boron-doped P-type buried collector and a P-type zone in the epitaxial layer of the PNP transistor is a critical aspect of the device structure. Moreover, the particular sequence and mode of the impurity introducing steps for the base and emitter zones of the respective transistors enable, in effect, individual adjustment of the respective transistor electrical parameters by means of heat treatments, - i -

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