Manufacture of gaas - gaaias semiconductor devices

Details Manufacture of gaas - gaaias semiconductor devices Manufacture of gaas - gaaias semiconductor devices

H - Electricity

01

L

356/197, 345/26,

H01L 21/20 (2006.01) H01L 21/306 (2006.01) H01L 31/0304 (2006.01) H01S 5/227 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1090458

ABSTRACT: The invention relates to a method in which a system of layers with a contact layer of gallium arsenide is formed epitaxially. Furthermore, in a second epitaxy treatment a layer of gallium aluminium arsenide is to be formed selectively. In order not to form said latter layer on the layer of gallium arsenide, the latter is shielded from gallium aluminium arsenide to be formed selectively by means of a masking layer having a composition which differs from that of the layer to be provided selectively, so that the masking layer can afterwards be removed selectively. - 9 -

285165

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