C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/180
C01B 7/19 (2006.01) C01G 28/00 (2006.01)
Patent
CA 1305600
MANUFACTURE OF HIGH PURITY LOW ARSENIC ANHYDROUS HYDROGEN FLUORIDE ABSTRACT OF THE INVENTION A process for manufacturing high purity anhydrous hydrogen fluoride (RF) having low levels of arsenic impurity by contacting anhydrous hydrogen fluoride product, or an intermediate product obtained during the manufacture of HF, with hydrogen peroxide in the presence of a catalyst which comprises effective amounts of molybdenum or an inorganic molybdenum compound and a phosphate compound. The volatile trivalent arsenic impurity in the anhydrous hydrogen fluoride is oxidized to a non-volatile pentavalent arsenic compound and the resultant mixture is distilled to recover high purity anhydrous hydrogen fluoride with reduced levels of arsenic impurity. In one emodiment, an oxidizing agent such as nitric acid or a nitrate salt is added to the reaction mixture to oxidize organic contaminants.
558682
Boghean Barry John
Butt Donald Christopher
Jenczewski Theodore John
Morgan Thomas Richard
Sturtevant Robert Lance
Allied-Signal Inc.
Gowling Lafleur Henderson Llp
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