Manufacturing method for a planar photodiode with...

Details Manufacturing method for a planar photodiode with... Manufacturing method for a planar photodiode with...

H - Electricity

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L

345/24

H01L 31/18 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1203877

ABSTRACT OF THE DISCLOSURE In a method for manufacturing an avalanche photodiode with an epitaxial layer sequence on a carrier body, the carrier body is not the substrate for an epitaxy of the photodiode. One of the epitaxial layers is employed as a selectively etchable mask for generating a pn junction of the diode.

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