Manufacturing method for semiconductor device

C - Chemistry – Metallurgy – 25 – D

Patent

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Details

C25D 7/00 (2006.01) C25D 7/12 (2006.01) C25D 17/00 (2006.01) C25D 17/08 (2006.01) C25D 19/00 (2006.01) H01L 23/50 (2006.01)

Patent

CA 2467037

Problem: It has been desired to form a plurality of combinations of plating films continuously on a single transfer rail and to form a plating film having a high quality and a uniform thickness on the surfaces of a lead frame and leads. Solving Means: The plating apparatus is provided below the single transfer rail with a plurality of plating tanks, in which plating solution baths are disposed. By moving the plating solution between the plating tanks and the plating solution baths, it is possible to select a plating film to be formed on a conductive member (21). As a result, it is possible to form combinations of plating films on the conductive member (21) continuously by the single transfer rail.

La présente invention concerne un procédé pour produire une pluralité de combinaisons de films d'électrodéposition de manière continue sur un rail de transfert unique et pour produire un film d'électrodéposition de grande qualité, qui présente une épaisseur uniforme sur les surfaces d'un cadre de connexion et de connexions. A cette fin, un appareil d'électrodéposition comprenant une pluralité de réservoirs d'électrodéposition dans lesquels se trouvent des bains de solution d'électrodéposition est placé en-dessous d'un rail de transfert. Le déplacement de la solution d'électrodéposition entre les réservoirs d'électrodéposition et les bains de solution d'électrodéposition permet de sélectionner un film d'électrodéposition à produire sur un élément conducteur (21). Il est ainsi possible de produire des combinaisons de films d'électrodéposition de manière continue sur l'élément conducteur (21) au moyen du rail de transfert unique.

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