Manufacturing method of a silicon wafer having a controlled...

H - Electricity – 01 – L

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H01L 21/00 (2006.01) C30B 15/00 (2006.01) C30B 33/00 (2006.01) H01L 21/02 (2006.01) H01L 21/322 (2006.01) H01L 21/70 (2006.01)

Patent

CA 2171375

In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700°C to 1,000°C at a rate of 15-1,000°C/min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850°C to 980°C for 0.5-60 minutes.

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