C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/02 (2006.01) C30B 25/18 (2006.01) C30B 29/40 (2006.01) H01L 21/205 (2006.01) H01L 21/20 (2006.01)
Patent
CA 2747574
The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of: - formation of a sacrificial bed (101) on the support (100), - formation of pillars (102) on said sacrificial bed, said pillars being made of a material compatible with GaN epitaxial growth, - growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support in holes (107) formed between the pillars, - removing the nitride crystal layer from the support.
La présente invention concerne un procédé de fabrication d'un monocristal de nitrure par croissance épitaxiale sur un support (100) comprenant une face de croissance (105), le procédé consistant à former un lit sacrificiel (101) sur le support (100), former des piliers (102) sur ledit lit sacrificiel, lesdits piliers étant constitués d'un matériau compatible avec la croissance épitaxiale de GaN, faire croître une couche de cristal de nitrure (103) sur les piliers dans des conditions de croissance telles que cette couche ne s'étend pas jusqu'au support dans les trous (107) formés entre les piliers, et retirer la couche de cristal de nitrure du support.
Beaumont Bernard
Faurie Jean-Pierre
Gowling Lafleur Henderson Llp
Saint-Gobain Cristaux & Detecteurs
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