C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/64, 32/84
C23C 14/04 (2006.01) B05B 15/04 (2006.01) B05C 17/06 (2006.01) B05D 1/32 (2006.01) C23C 16/04 (2006.01)
Patent
CA 1283282
ABSTRACT The present invention provides a means of relieving stress on an apertured mask, typically used to deposit thin-film structures on a glass substrate, such that the mask easily conforms to the substrate surface when the mask is in its hold down and patterning position during the deposition process. In particular, the present invention provides a mask assembly having a structurally relieved inner apertured mask portion from an outer mask portion that serves to eliminate wrinkles or crimps in the mask during deposition which may produce unacceptable blurs or shorts between thin-film structures. The stress relieving reature includes a slot which is disposed peripherally about the inner mask and two small segments providing the interconnection between the inner and outer mask of the mask assembly.
519972
Boudreau Robert A.
Gte Products Corporation
R. William Wray & Associates
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