G - Physics
03
F
95/94.5
G03F 5/00 (2006.01) G03F 1/00 (2006.01)
Patent
CA 1322684
Abstract of the Disclosure Repair of transparent errors in masks utilized for lithographic processes in the manufacture of devices is accomplished by a particularly expedient procedure. In this procedure a metal ion beam such as a gallium ion beam is directed to the region that is to be repaired. An organic gas, including a material having an aromatic ring with an unsaturated substituent, is introduced into this region. The interaction of the gas with the ion beam produces an opaque adherent deposit. The resolution for this deposition is extremely good and is suitable for extremely fine design rules, e.g., 1 µm and below.
582374
Harriott Lloyd Richard
Vasile Michael Joseph Robert
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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