G - Physics – 21 – F
Patent
G - Physics
21
F
356/192, 204/96.
G21F 5/04 (2006.01) G02B 5/00 (2006.01) G03F 1/14 (2006.01) G21K 1/10 (2006.01)
Patent
CA 1092255
MASK STRUCTURES FOR X-RAY LITHOGRAPHY Abstract of the Disclosure The present invention relates to a mask structure for x-ray lithography. The mask structure is comprised of a dimensionally stable support member and a substrate comprising a x-ray-transparent film stretched over and bonded to the support member. Stress-compensating consti- tuents are provided for forming a very-low-stress x-ray- absorp pattern on the substrate. The invention also includes a method for producing a mask structure for x-ray lithography. The method is comprised of stretching an x-ray-transparent film over a dimensionally stable support member and bonding the film to the member. The steps further include depositing an x-ray-absorptive layer on the film. The method is characterized by depositing on the film a relatively thin first layer of metals charac- terized by respectively compensating stresses, depositing a relatively thick x-ray-absorbent layer on the relatively thin first layer and depositing a relatively thin second layer comprising metals characterized by respectively compensating stresses on the thick x-ray-absorbent layer.
278371
Coquin Gerald A.
Maldonado Juan R.
Maydan Dan
Somekh Sasson R.
Kirby Eades Gale Baker
Western Electric Company Incorporated
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