Mask within a concave semiconductor structure

Details Mask within a concave semiconductor structure Mask within a concave semiconductor structure

H - Electricity

01

L

H01L 21/027 (2006.01) H01L 21/311 (2006.01) H01L 21/312 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 2061120

BU9-89-027 ABSTRACT A method is described for selectively masking sidewall regions of a concave surface formed in a semiconductor body, the method comprising the steps of: forming a conformal layer of masking material on a sidewall of the concave structure; emplacing in the concave structure, a selectively removable material that partially fills the concave structure, an upper surface of the material determining the edge of a region of the concave structure to be masked; removing a portion of the conformal layer above the upper surface of the selectively removable material; and removing the selectively removable material to leave a region of remaining conformal material as a mask.

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