G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 5/00 (2006.01) G03F 1/14 (2006.01)
Patent
CA 2159848
A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.
Harriott Lloyd Richard
Liddle James Alexander
Volkert Cynthia Ann
Waskiewicz Warren Kazmir
Windt David Lee
At&t Corp.
Kirby Eades Gale Baker
LandOfFree
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